November 2024

Samsung plans record-breaking 400-layer NAND chip that could be key to breaking 200TB barrier for ultra large capacity AI hyperscaler SSDs

Samsung to release 400-layer NAND chip for AI data centers New BV NAND tech boosts density and minimizes heat buildup Plans for 1,000-layer NAND by 2030 to expand capacity Samsung is working to launch a record-breaking 400-layer vertical NAND flash

Samsung plans record-breaking 400-layer NAND chip that could be key to breaking 200TB barrier for ultra large capacity AI hyperscaler SSDs Read More »

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